Analysis of temperature dependent I-V characteristics of Pd/ZnO/n-Si Schotky diode by Sol-gel method
| Author(s) | : | Ravi Kumar, Sandeep Mishra |
| Institution | : | Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University),Varanasi- 221005, India |
| Published In | : | Vol. 4, Issue 15 — January 2017 |
| Page No. | : | - |
| Domain | : | Engineering |
| Type | : | Research Paper |
| ISSN (Online) | : | 2348-4470 |
| ISSN (Print) | : | 2348-6406 |
The ZnO thin film was deposited on n-Si (100)by sol-gel and spin coating technique. Pd/ZnO/n-Si/Ti/AlSchottky contact were fabricated by the thermalevaporation method using shadow mask technique. TheZnO thin film was annealed in Ar (argon) atmosphere at4500C to enhanced structural and surface morphology.The structure and surface morphology of ZnO thin filmprepared were characterize by the XRD and SEM and itwas found that the thin film is polycrystalline in naturewith homogeneous surface. The I-V characteristics of thedevice were analyzed by the semiconductor parameteranalyzer. The semiconductor parameters were determinedat different operating temperature in air atmosphere.
Ravi Kumar, Sandeep Mishra, “Analysis of temperature dependent I-V characteristics of Pd/ZnO/n-Si Schotky diode by Sol-gel method”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 4, Issue 15, pp. -, January 2017.
