COMPARISON ANALYSIS OF LOW NOISE AMPLIFIER BY USING FET AND BJT FOR MICROWAVE FREQUENCY BANDS

Authors

  • MAULIK B. PATEL Research scholar, Department of Electronics and communication, Kadi Sarva Vishwavidyalaya, Road Number 5, Sector 15, Gandhinagar, Gujarat 382016,India
  • DR.G.R.KULKARNI Research Guide , Department of Electronics and communication, Kadi Sarva Vishwavidyalaya, Road Number 5, Sector 15, Gandhinagar, Gujarat 382016,India.

Keywords:

RF CMOS LNA RF BJT LNA, NF,RF BJT,S2P MODEL,ADS

Abstract

Simulation comparison Of Low Noise Amplifier (LNA) using FET((Field Effect Transistor) versus
BJT(Bipolar Junction Transistor) LNA is proposed using different RF simulator . As Low Noise Amplifier (LNA) is the
most essential block of devices in every communication RF Receiver system and its aim is to maintain the faithful gain
with optimum noise figure having good linearity. So to achieve desired terms, generally FET Family is used for the
design of LNA . But in today’s technology formation of LNA using RF BJT with different Transistor Families with their
essential characteristics can be possible. The MOSFET LNA was simulated and designed with CMOS MOSIS process. It
was concluded that the use of low-cost and high integration CMOS technology results in penalty in the power dissipation
and frequency response which are much better in bipolar technology

Downloads

Published

2017-10-25

How to Cite

MAULIK B. PATEL, & DR.G.R.KULKARNI. (2017). COMPARISON ANALYSIS OF LOW NOISE AMPLIFIER BY USING FET AND BJT FOR MICROWAVE FREQUENCY BANDS. International Journal of Advance Engineering and Research Development (IJAERD), 4(10), 371–375. Retrieved from https://ijaerd.org/index.php/IJAERD/article/view/3855

Issue

Vol. 4 No. 10 (2017): Volume 4 Issue 10 OCTOBER-2017

Section

Articles