Paper Details

Leakage components are very important for estimation and reduction of leakage power especially in submicron regimes in which threshold voltage, gate oxide thickness and channel length scale downwards. In present era itprovides motivation to design a low power SRAM. This paper presents comparative analysis and study in both 180nmand 90nm, from which one can indentify that how the leakage issues become severe if technology node go downwards.

Shreya Patel, Viral Patel, Rakesh Koringa, Himani Patel, Sachin Patel, “Comparative analyis and study between 180nm and 90nm”, International Journal of Advance Engineering and Research Development (IJAERD), Vol. 4, Issue 13, pp. -, January 2017.